(China (Mainland))
Product Summary
The 2SK1461 is a n-channel silicon MOSFET with ultrahigh-speed switching Applications. This device is characterized by low ON-state resistance, ultrahigh-speed switching, converters. Its drain current (Pulse) is 10A at PW ≤ 10ms, duty cycle ≤ 1. And its allowable power dissipation is 120w at Tc=25°C;2.5w. What is more, the storage temperature of the 2SK1461 ranges from –55 to +15 °C.
Parametrics
Absolute maximum ratings at Ta = 25°C: (1)Drain-to-Source Voltage, VDSS: 900 V; (2)Gate-to-Source Voltage, VGSS: ±30 V; (3)Drain Current (DC), ID: 5 A; (4)Drain Current (Pulse), IDP:10A at PW ≤ 10ms, duty cycle ≤ 1%; (5)Allowable Power Dissipation, PD:120w at Tc=25°C;2.5w; (6)Channel Temperature, Tch: 150 °C; (7)Storage Temperature, Tstg: –55 to +15 °C.
Features
Features: (1)Low ON-state resistance; (2)Ultrahigh-speed switching; (3)Converters.
Diagrams
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 2SK1461 |
Other |
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Data Sheet |
Negotiable |
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2SK1056 |
Other |
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Data Sheet |
Negotiable |
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2SK1057 |
Other |
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Data Sheet |
Negotiable |
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2SK1058 |
Other |
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Data Sheet |
Negotiable |
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2SK1058-E |
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MOSFET N-CH 160V 7A TO-3P |
Data Sheet |
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2SK1061 |
Other |
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Data Sheet |
Negotiable |
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2SK1062 |
Other |
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Data Sheet |
Negotiable |
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