Product Summary

2SK2757 is a N-channel MOS-FET belongs to FAP-IIS Series. With 500V drain source voltage, the max power dissipation is 80W. The thermal resistance is 1, 56 °C/W at the condition of channel to case, but 75°C/W when the condition is channel to air. It is widely applied in switching regulators, UPS, DC-DC converters and some other general purpose power amplifier.

Parametrics

Absolute Maximum Ratings: (1)Drain-Source-Voltage, Vds: 500 V; (2)Continous Drain Current, Id: 10 A; (3)Pulsed Drain Current, Id(puls): 40 A; (4)Gate-Source-Voltage, Vgs: 35 V; (5)Repetitive or Non-Repetitive (Tch £ 150°C), Iar: 10 A; (6)Avalanche Energy, Eas: 163 mJ; (7)Max. Power Dissipation, Pd: 80 W; (8)Operating and Storage Temperature Range, Tch: 150 °C; (9)Operating and Storage Temperature Range, Tstg: -55 ~ +150 °C.

Features

Features:(1)High Speed Switching; (2)Low On-Resistance; (3)No Secondary Breakdown; (4)Low Driving Power; (5)High Voltage; (6)VGS = ± 30V Guarantee; (7)Repetitive Avalanche Rated.

Diagrams

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2SK2757-01
2SK2757-01

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2SK2002-01MR
2SK2002-01MR

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2SK2003-01MR
2SK2003-01MR

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2SK2007
2SK2007

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2SK2008
2SK2008

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2SK2009
2SK2009

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2SK2010
2SK2010

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