(China (Mainland))
Product Summary
2SK358 is a N-channel silicon power MOS-FET which belongs to Super FAP-G Series. With 300v drain source voltage, the max power dissipation is 35W(Ta=25°C) and 2.16W(Tc=25°C). The thermal resistance is 3.57 °C/W at the condition of channel to case, but 58.0°C/W when the condition is channel to air. It is widely applied in switching regulators, UPS (Uninterruptible Power Supply), and DC-DC converters.
Parametrics
Absolute Maximum Ratings:(1)Drain-source voltage, VDS: 300V; (2)Drain-source voltage, VDSX *5: 270V; (3)Continuous drain current, ID: ±12A; (4)Pulsed drain current, ID(puls]: ±48A; (5)Gate-source voltage, VGS: ±30V; (6)Repetitive or non-repetitive, IAR *2: 12A; (7)Maximum Avalanche Energy, EAS *1: 193mJ; (8)Maximum Drain-Source, dV/dt dVDS/dt *4: 20kV/μs; (9)Peak Diode Recovery, dV/dt dV/dt *3: 5kV/μs; (10)Max. power dissipation, PD Ta=25°C: 2.16W; (11)Max. power dissipation, PD Tc=25°C: 35W; (12)Operating and storage temperature range, Tch: +150°C; (13)Operating and storage temperature range, Tstg: -55 to +150°C; (14)Isolation Voltage, VISO *6: 2kVrms.
Features
Features:(1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.
Diagrams
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Pricing (USD) |
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 2SK3581-01L |
Other |
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Data Sheet |
Negotiable |
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2SK3581-01S |
Other |
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Data Sheet |
Negotiable |
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2SK3581-01SL |
Other |
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Data Sheet |
Negotiable |
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