(China (Mainland))
Product Summary
The 2SK3687 is a n-channel silicon power mosfet. It can Supply electronic parts and components ,such as transistor, semiconductor, single hhase bridge, diode rectifier power,SCR module and kinds of power electronics. This product is widely applied in Switching regulators, DC-DC converters,UPS (Uninterruptible Power Supply) and more.
Parametrics
Maximum ratings:(1)Drain-source voltage: VDS= 600v;VDSX=600v at VGS=-30V; (2)Continuous drain current, ID: ±16A; (3)Pulsed drain current, ID(puls]: ±64A; (4)Gate-source voltage, VGS: ±30v; (5)Non-Repetitive Maximum avalanche current, IAS: 16A at Tch 150°C; (6)Non-Repetitive Maximum avalanche energy, EAS: 242.7mj at L=1.74mH,VCC=60V *1; (7)Maximum Drain-Source dV/dt, dVDS/dt: 20kV/s at VDS ≦ 600V; (8)Peak diode recovery dV/dt, dV/dt: 5kV/μs at *2; (9)Max. power dissipation, PD: 2.16w at Ta=25°C;97w at Tc=25°C; (10)Operating and storage temperature range: Tch= +150°C;Tstg=-55 to +150°C; (11)Isolation voltage, VISO: 2kVrms at t=60sec, f=60Hz.
Features
Features:(1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.
Diagrams
 |
 2SK3001 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3009 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3012 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3013 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
2SK3017 |
|
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
|
|
||||||||||||
