Product Summary

2SK1221 is a N-channel silicon power MOS-FET which belongs to F-II Series. With 250V drain source voltage, the max power dissipation is 80W. The thermal resistance is 75 °C/W at the condition of channel to case, but 1056°C/W when the condition is channel to air. It is widely applied in switching regulators, UPS, DC-DC converters and some other general purpose power amplifier.

Parametrics

Absolute Maximum Ratings: (1)Drain-Source-Voltage, Vds: 250 V; (2)Continous Drain Current, Id: 10 A; (3)Pulsed Drain Current, Id(puls): 28 A; (4)Gate-Source-Voltage, Vgs: 30 V; (5)continuous reverse drain current, Idr: 10A; (6)Max. Power Dissipation, Pd: 80 W; (7)Operating and Storage Temperature Range, Tch: 150 °C; (8)Operating and Storage Temperature Range, Tstg: -55 ~ +150 °C.

Features

Features:(1)High Speed Switching; (2)Low On-Resistance; (3)No Secondary Breakdown; (4)Low Driving Power; (5)High Voltage; (6)VGS = ± 30V Guarantee.

Diagrams

2SK1056
2SK1056

Other


Data Sheet

Negotiable 
2SK1057
2SK1057

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Data Sheet

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2SK1058
2SK1058

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Data Sheet

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2SK1058-E
2SK1058-E


MOSFET N-CH 160V 7A TO-3P

Data Sheet

0-1: $5.67
2SK1061
2SK1061

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Data Sheet

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2SK1062
2SK1062

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Data Sheet

Negotiable