Product Summary

2SK1014 is a N-channel silicon power MOS-FET which belongs to F-II Series. With 500V drain source voltage, the max power dissipation is 125W. The thermal resistance is 35 °C/W at the condition of channel to case, but 1, 0°C/W when the condition is channel to air. It is widely applied in switching regulators, UPS, DC-DC converters and some other general purpose power amplifier.

Parametrics

Absolute Maximum Ratings: (1)Drain-Source-Voltage, Vds: 500 V; (2)Continous Drain Current, Id: 12A; (3)Pulsed Drain Current, Id(puls): 36A; (4)Gate-Source-Voltage, Vgs: ±30 V; (5)Max. Power Dissipation, Pd: 125 W; (5)continuous reverse drain current, Idr: 12A; (7)Operating and Storage Temperature Range, Tch: 150 °C; (8)Operating and Storage Temperature Range, Tstg: -55 ~ +150 °C.

Features

Features:(1)High Speed Switching; (2)Low On-Resistance; (3)No Secondary Breakdown; (4)Low Driving Power; (5)High Voltage; (6)VGS = ± 30V Guarantee; (7) Avalanche Proof.

Diagrams

2SK1365(F)
2SK1365(F)
Toshiba
MOSFET N-ch 1000V 7A 1.5 ohm
Data Sheet
0-1: $3.39
1-10: $2.71
10-100: $2.30
100-250: $2.03
2SK1381(F)
2SK1381(F)

MOSFET N-CH 100V 50A TO-3PN
Data Sheet
0-50: $3.70
2SK170BLF
2SK170BLF
Toshiba
JFET SMALL SIGNAL TRANS PB-F TO-92 JFET
Data Sheet
0-1: $0.48
1-10: $0.38
10-100: $0.33
100-250: $0.29
2SK1446LS_1333743
2SK1446LS_1333743
Other

Data Sheet
Negotiable 
2SK1446LS
2SK1446LS
Other

Data Sheet
Negotiable 
2SK1445LS
2SK1445LS
Other

Data Sheet
Negotiable